| PART |
Description |
Maker |
| APT50GP60S |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT11GP60BDQB |
POWER MOS 7 IGBT
MOSFET
|
Advanced Power Technolo...
Advanced Power Technology
|
| APT15GP60BDF1 |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology Ltd.
|
| APT83GU30B APT83GU30S |
POWER MOS 7 IGBT
MOSFET
|
Advanced Power Technology
|
| APT65GP60L2DF2 |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
http://
|
| SPP04N60S5 |
Cool MOS Power Transistor(MOS 型功率晶体管) 4.5 A, 600 V, 0.95 ohm, N-CHANNEL, Si, POWER, MOSFET
|
SIEMENS AG
|
| APT50M38JFLL |
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
MOSFET P-CH 20V 4.3A 8-SOIC 电源MOS 7TM是一个低损耗，高电压，N沟道增强型功率MOSFET的新一代
POWER MOS 7 500V 91A 0.038 Ohm
|
Advanced Power Technology, Ltd.
|
| APT30GP60B |
POWER MOS 7 IGBT
MOSFET
|
Advanced Power Technolo...
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| APT46GA90JD40 |
High Speed PT IGBT
Insulated Gate Bipolar Transistor - Power MOS 8; Package: ISOTOP®; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 46; 87 A, 900 V, N-CHANNEL IGBT
|
Microsemi Corporation
Microsemi, Corp.
|
| APT5010LLC APT5010B2LC APT5010B2LC-06 |
47 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS VI 500V 47A 0.100 Ohm
|
Advanced Power Technolo...
Advanced Power Technology Ltd.
|
| APT15GP60K |
POWER MOS 7 IGBT
|
Advanced Power Technology
|
